By Yogesh B. Gianchandani, Osamu Tabata, Hans Zappe
Finished Microsystems, is a brand new 3-volume reference paintings on Microelectromechanical platforms (MEMS). The microsystems box has increased to include a number of applied sciences, and microelectronics has now been joined through micro-mechanics, micro-fluidics and micro-optics to permit the fabrication of advanced, multi- sensible built-in microsystems. At over 2000 pages, finished Microsystems represents the authoritative basic reference resource on microsystems. It addresses the necessity for an summary of the applied sciences and features to be had during this hugely interdisciplinary and dynamically-growing engineering box. entire Microsystems, presents an exhaustive assessment of the wide variety of subject matters which include the microsystems box, together with, layout and fabrics, fabrication and packaging, optical structures, chemical and organic structures, actual sensors, actuation, electronics for MEMS and commercial functions. each article within the paintings has been commissioned through a panel of across the world famous editors and written via an said professional in anybody of quite a few disciplines. The articles supply a concise evaluation of a selected point of the microsystems box and are followed through huge bibliographies, cross-referencing and indexes, improving the price of the textual content. via guiding the person to the main correct additional analyzing in the ever-expanding to be had literature. a lot care has been given to prevent overlap and to supply consistency well-liked and contents. * the 1st and most advantageous accomplished reference on Microelectromechanical platforms (MEMS)* Unifies confirmed examine from well-known resources in an simply obtainable layout* presents a necessary reference resource for either lecturers and pros within the box
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Additional resources for Comprehensive Microsystems, Three-Volume Set
In addition, in situ doping during LPCVD by adding the dopant source, such as PH4 and B2H6, can be used. In the surface micromachined polysilicon structures, the solid-phase diffusion from the phosphosilicate glass (PSG) films has often been employed for stress gradient control. In this case, the polysilicon film is often sandwiched by PSG layers to dope phosphor uniformly. For thicker polysilicon films, the deposition of silicon dioxide layers using epitaxial growth tools is used. The plasma-enhanced chemical vapor Silicon and Related Materials depositions (PECVDs) and sputter depositions are employed because of their lower deposition temperature mainly for sacrificial layer formation in the microsystems.
Semicond. Sci. Technol. 12, 1515–49 Schwarz B, Robbins H 1976 Chemical etching of silicon – IV. Etching technology. J. Electrochem. Soc. 123, 1903–9 Sedkey S, Fiorini P, Caymax M, Verbist A, Baert C 1998 IR bolometers mad of polycrystalline silicon germanium. Sens. Actuators A 66, 193–9 22 Silicon and Related Materials Sedky S, Witvrouw A, Bender H, Baert K 2001 Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers. IEEE Trans. Electron Devices 48, 377–85 Sedkey S, Witvrouw A, Baert K 2002 Poly SiGe, a promising material for MEMS monolithic integration with the driving electronics.
Tech. Digest IEEE Int. Electron Device Meeting, San Francisco, USA, pp. 753–6 Yonehara T, Sakaguchi K 2001 ELTRANÒ; novel SOI wafer technology. JSAP Int. 4, 11–16 Yonehara T, Sakaguchi K, Sato N 1994 Epitaxial layer transfer by bond and etch back of porous Si. Appl. Phys. Lett. 64, 2108–10 Yoshioka T, Ando T, Shikida M, Sato K 2000 Tensile testing of SiO2 and Si3N4 films carried out on a silicon chip. Sens. Actuators A 82, 291–6 Zhang X G, Collins S D, Smith R L 1989 Porous silicon formation and electropolishing of silicon by anodic polarization in HF solution.